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SIR412DP-T1-GE3 VISHAY Trans MOSFET N-CH 25V 20A 8-Pin PowerPAK SO T/R

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Sunbeam Electronics (Hong Kong) Limited

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SIR412DP-T1-GE3 VISHAY Trans MOSFET N-CH 25V 20A 8-Pin PowerPAK SO T/R

Brand Name : VISHAY

Model Number : SIR412DP-T1-GE3

Place of Origin : CHINA

MOQ : 100

Price : Pls contact sales for updated price

Payment Terms : paypal, T/T

Supply Ability : 2K

Delivery Time : 7-15 days

Packaging Details : 1000

MPN : SIR412DP-T1-GE3

MFR : VISHAY

Maximum Drain Source Voltage (V) : 25

Supplier Package : QFN8

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Product Technical Specifications

EU RoHS

Compliant

ECCN (US)

EAR99

Part Status

Obsolete

Automotive

PPAP

Product Category

Power MOSFET

Configuration

Single Quad Drain Triple Source

Channel Mode

Enhancement

Channel Type

Number of Elements per Chip

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

12@10V

Typical Gate Charge @ Vgs (nC)

10.7@10V|4.9@4.5V

Typical Gate Charge @ 10V (nC)

10.7

Typical Input Capacitance @ Vds (pF)

600@10V

Maximum Power Dissipation (mW)

3900

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Supplier Package

PowerPAK SO

Pin Count

Mounting

Surface Mount

Package Height

1.07(Max)

Package Length

4.9

Package Width

5.89

PCB changed

Lead Shape

No Lead

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